K-NC (Kuan-Neng Chen) is a professor of the Department of Electro

K-NC (Kuan-Neng Chen) is a professor of the Department of Electronics Engineering in National Chiao Tung University (National Chiao Tung University), Hsinchu, Taiwan. He received his Ph.D. degree in Electrical Engineering and Computer Science and

his M.S. degree in Materials Science and Engineering from Massachusetts Institute of Technology (MIT), respectively. Prior to the faculty position, he was a research staff member and project leader at the IBM Thomas J. Watson CX-6258 Research Center. His current research interests are three-dimensional integrated circuits (3D IC), through-silicon via (TSV) technology, wafer bonding technology, and heterogeneous integration. H-CC (Huang-Chung Cheng) is a professor of the Department www.selleckchem.com/products/nepicastat-hydrochloride.html of Electronics Engineering in National Chiao Tung University (National Chiao

Tung University), Hsinchu, Taiwan. He received the B.S. degree in physics from National Taiwan University in 1977 and the M.S. and Ph.D. degrees from the Department of Materials Science and Engineering, National Tsing Hua University (National Tsing Hua University), Hsinchu, Taiwan, in 1979 and 1985, respectively. He has published nearly 500 technical mTOR inhibitor papers in international journals and conferences and also held more than 50 patents. His current research interests are in the areas of high-performance TFTs, novel nanowire devices, non-volatile memories, three-dimensional integrations, novel field emission displays, biosensors, and photoelectronic device. Acknowledgments The authors thank the National Science Council of the Republic of China for their support under the Contract NSC 101-2221-E-009-077-MY3. Thanks are also due to the Nano Facility Center (NFC) in National Chiao Tung University for the technical supports. References ADP ribosylation factor 1. Dalton B, Collins S, Munoz E, Razal JM, Ebron VH, Ferraris JP, Coleman JN, Kim BG, Baughman RH: Super-tough carbon-nanotube fibres. Nature 2003, 423:703. 10.1038/423703aCrossRef 2. Wei BQ, Vajtai R, Ajayan PM: Reliability and current carrying capacity of carbon nanotubes. Appl Phys Lett 2001, 79:1172. 10.1063/1.1396632CrossRef 3. Li WZ, Xie SS, Qian

LX, Chang BH, Zou BS, Zhou WY, Zhao RA, Wang G: Large-scale synthesis of aligned carbon nanotubes. Science 1996, 274:1701–1703. 10.1126/science.274.5293.1701CrossRef 4. Gamaly EG, Ebbesen TW: Mechanism of carbon nanotube formation in the arc discharge. Phys Rev B 1995, 52:2083–2086.CrossRef 5. Yudasaka M, Komatsu T, Ichihashi T, Iijima S: Single-wall carbon nanotube formation by laser ablation using double-targets of carbon and metal. Chem Phys Lett 1997, 278:102–106. 10.1016/S0009-2614(97)00952-4CrossRef 6. Meitl MA, Zhou Y, Gaur A, Jeon S, Usrey ML, Strano MS, Rogers JA: Solution casting and transfer printing single-walled carbon nanotube films. Nano Lett 2004, 4:1643–1647. 10.1021/nl0491935CrossRef 7. Wang J, Musameh M: Carbon nanotube screen-printed electrochemical sensors. Analyst 2004, 129:1–2. 10.1039/b313431hCrossRef 8.

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